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Magnetic Memory
Fundamentals and Technology

$163.00 (P)

  • Date Published: June 2010
  • availability: In stock
  • format: Hardback
  • isbn: 9780521449649

$ 163.00 (P)

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About the Authors
  • If you are a semiconductor engineer or a magnetics physicist developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and how they are related to memory performance, characterization methods of magnetic films, and tunneling magnetoresistance effect devices. It also covers memory cell options, array architecture, circuit models, and read-write engineering issues. You'll understand the soft fail nature of magnetic memory, which is very different from that of semiconductor memory, as well as methods to deal with the issue. You'll also get invaluable problem-solving insights from real-world memory case studies. This is an essential book for semiconductor engineers who need to understand magnetics, and for magnetics physicists who work with MRAM. It is also a valuable reference for graduate students working in electronic/magnetic device research.

    • Learn the key information, from the physics of magnetism to the engineering design of memory, with this step-by-step practical guide
    • Understand the soft fail nature of magnetic memory, which is very different from that of semiconductor memory, as well as methods to deal with the issue
    • Get invaluable problem-solving insights from real-world memory case studies
    Read more

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    Product details

    • Date Published: June 2010
    • format: Hardback
    • isbn: 9780521449649
    • length: 208 pages
    • dimensions: 254 x 180 x 15 mm
    • weight: 0.56kg
    • contains: 150 b/w illus. 5 tables 15 exercises
    • availability: In stock
  • Table of Contents

    1. Basic magnetostatics
    2. Magnetic films
    3. Properties of patterned ferromagnetic film
    4. Magnetoresistance effects and memory devices
    5. Field-write mode MRAMs
    6. Spin torque transfer MRAM
    7. Applications of MTJ based technology
    Appendices: A. Unit conversion table cgs vs. SI
    B. Dimensions of magnetism
    C. Physical constants
    D. Normal (Gaussian) distribution and quantile plot
    E. Weibull distribution
    F. TDDB reliability test of thin film
    G. Binomial distribution and Poisson distribution
    H. Defect density
    I. Fe, Co, Ni element chemistry parameters
    J. Soft error, hard fail and design margin.

  • Authors

    Denny D. Tang, MagIC Technologies, Inc., California
    Denny D. Tang is Vice President of MagIC Technologies, Inc., and has over 30 years' experience in the semiconductor industry. After receiving his Ph.D. in Electrical Engineering from The University of Michigan in 1975, he spent 15 years at IBM T.J. Watson Research Center, Yorktown Heights, 11 years at IBM Almaden Research Center at San José and 6 years at Taiwan Semiconductor Manufacturing Company (TSMC). He is a Fellow of the IEEE, TSMC and the Industrial Technology Research Institute (ITRI).

    Yuan-Jen Lee, MagIC Technologies, Inc., California
    Yuan-Jen Lee is a Senior Engineer at MagIC Technologies, Inc., where he develops advanced magnetic memory technology. He received his Ph.D. from the National Taiwan University in 2003, after which he worked for ITRI, Taiwan, developing toggle MRAM and spin-torque MRAM.

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