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2D Materials
Properties and Devices

$99.99 (P)

Mikhail I. Katsnelson, Annalisa Fasolino, Jian-Hao Chen, Feng Wang, Sufei Shi, C. DiMarco, R. Li, S. Rastogi, J. Hone, J. W. Kysar, Ado Jorio, Luiz Gustavo Cançado, Leandro M. Malard, Alexander A. Balandin, Frank Koppens, Mark B. Lundeberg, Marco Polini, Tony Low, Phaedon Avouris, James R. Williams, Chen Wang, Xidong Duan, Xiangfeng Duan, Aron W. Cummings, Sergio O. Valenzuela, Frank Ortmann, Stephan Roche, Lei Wang, Cory. R. Dean, Dechao Geng, Kian Ping Loh, Rafael Roldán, Francisco Guinea, Hongyi Yu, Wang Yao, Andras Kis, Pasqual Rivera, Xiaodong Xu, Thomas Mueller, Yumeng Shi, Lain-Jong Li, Xiaolong Zou, Boris I. Yakobson, Andrey Chaves, Wei Ji, Jesse Maassen, Traian Dumitrica, Yuchen Du, Zhe Luo, Han Liu, Xianfan Xu, Peide D. Ye, Andres Castellanos-Gomez, Mo Li, Guy Le Lay, Eric Salomon, Thierry Angot, S. Ciraci, S. Cahangirov
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  • Date Published: July 2017
  • availability: In stock
  • format: Hardback
  • isbn: 9781107163713

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  • Learn about the most recent advances in 2D materials with this comprehensive and accessible text. Providing all the necessary materials science and physics background, leading experts discuss the fundamental properties of a wide range of 2D materials, and their potential applications in electronic, optoelectronic and photonic devices. Several important classes of materials are covered, from more established ones such as graphene, hexagonal boron nitride, and transition metal dichalcogenides, to new and emerging materials such as black phosphorus, silicene, and germanene. Readers will gain an in-depth understanding of the electronic structure and optical, thermal, mechanical, vibrational, spin and plasmonic properties of each material, as well as the different techniques that can be used for their synthesis. Presenting a unified perspective on 2D materials, this is an excellent resource for graduate students, researchers and practitioners working in nanotechnology, nanoelectronics, nanophotonics, condensed matter physics, and chemistry.

    • Provides a comprehensive and unified overview of 2D materials
    • Includes authoritative explanations by leading researchers in the field
    • Accessible even to students with only an undergraduate background in science and engineering
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    Reviews & endorsements

    Advance praise: ‘This book, edited by the top researchers who have been working on atomically thin materials in the past decade, contains the essential contents of our current scientific understanding of this novel form of materials. The authors have compiled comprehensive and contemporary reviews on various topics ranging from fundamental science to engineering applications, providing an excellent textbook for students as well as references for experts in the research field.’ Philip Kim, Harvard University, Massachusetts

    Advance praise: ‘This edited volume consists of 25 topical chapters contributed by scientists active in the growing field of 2D semiconductors, who summarize the most salient features of these intriguing materials. Contributions are grouped into three parts dedicated to graphene, transition metal dichalcogenides, and elemental group V layered semiconductors including phosphorene. Covered are the most actively researched topics synthesis, stability, thermal, and electronic properties including transport, optics, optoelectronics and spintronics, phonon structure, and mechanical properties of few-layer systems including heterostructures, as probed by state-of-the-art experimental and theoretical techniques. While emphasis is placed on the rigorous scientific representation of knowledge acquired to date, the contributors also offer a refreshing insight into potential applications of this new class of materials.’ David Tomanek, Michigan State University

    Advance praise: ‘The field of 2D materials, which started with graphene, now includes dozens of one-atom thick crystals. Many of them demonstrate properties end effects which are equally exciting as those found for the famous ancestor. And, judging from the recent progress, the field will be developing very fast for many years ahead. This book, written by scientists who are the leaders in their fields, is the most comprehensive and up-to-date attempt to review this fast-developing subject. Starting with an in-depth summary on graphene, it moves to other 2D crystals, such as transition metal dichalcogenides, black phosphorous and others, providing probably the most complete reference on the topic at the moment.’ Kostya Novoselov, University of Manchester

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    Product details

    • Date Published: July 2017
    • format: Hardback
    • isbn: 9781107163713
    • copublisher: Materials Research Society
    • dimensions: 253 x 178 x 27 mm
    • weight: 1.17kg
    • contains: 232 b/w illus. 12 tables
    • availability: In stock
  • Table of Contents

    1. Graphene: basic properties Mikhail I. Katsnelson and Annalisa Fasolino
    2. Electrical transport in graphene: carrier scattering by impurities and phonons Jian-Hao Chen
    3. Optical properties of graphene Feng Wang and Sufei Shi
    4. Graphene mechanical properties C. DiMarco, R. Li, S. Rastogi, J. Hone and J. W. Kysar
    5. Vibrations in graphene Ado Jorio, Luiz Gustavo Cançado and Leandro M. Malard
    6. Thermal properties of graphene: from physics to applications Alexander A. Balandin
    7. Graphene plasmonics Frank Koppens, Mark B. Lundeberg, Marco Polini, Tony Low and Phaedon Avouris
    8. Electron optics with graphene p-n junctions James R. Williams
    9. Graphene electronics Chen Wang, Xidong Duan and Xiangfeng Duan
    10. Graphene: optoelectronic devices Thomas Mueller and Phaedon Avouris
    11. Graphene spintronics Aron W. Cummings, Sergio O. Valenzuela, Frank Ortmann and Stephan Roche
    12. Graphene-BN heterostructures Lei Wang, James Hone and Cory. R. Dean
    13. Controlled growth of graphene crystals by chemical vapor deposition: from solid metals to liquid metals Dechao Geng and Kian Ping Loh
    14. Electronic properties and strain engineering in semiconducting transition metal dichalcogenides Rafael Roldán and Francisco Guinea
    15. Valley-spin physics in 2D semiconducting transition metal dichalcogenides Hongyi Yu and Wang Yao
    16. Electrical transport in MoS2, a prototypical semiconducting TMDC Andras Kis
    17. Optical properties of TMD heterostructures Pasqual Rivera, Wang Yao and Xiaodong Xu
    18. TMDs - optoelectronic devices Thomas Mueller
    19. Large area synthesis Yumeng Shi and Lain-Jong Li
    20. Defects in two-dimensional materials Xiaolong Zou and Boris I. Yakobson
    21. Theoretical overview of black phosphorus Tony Low, Andrey Chaves, Wei Ji, Jesse Maassen and Traian Dumitrica
    22. Anisotropic properties of black phosphorus Yuchen Du, Zhe Luo, Han Liu, Xianfan Xu and Peide D. Ye
    23. Optical properties and optoelectronic applications of black phosphorus Andres Castellanos-Gomez and Mo Li
    24. Silicene, germanene and stanene Guy Le Lay, Eric Salomon and Thierry Angot
    25. Predictions of single-layer honeycomb structures from first-principles S. Ciraci and S. Cahangirov.

  • Editors

    Phaedon Avouris, IBM T. J. Watson Research Center, New York
    Phaedon Avouris is an IBM Fellow Emeritus. He is a member of the National Academy of Sciences, and a Fellow of the American Academy of Arts and Sciences, the American Physical Society, the Institute of Physics, the Institute of Electrical and Electronics Engineers (IEEE), the Materials Research Society, and the American Association for the Advancement of Science.

    Tony F. Heinz, SLAC National Accelerator Laboratory
    Tony F. Heinz is a Professor of Applied Physics and Photon Science at Stanford University, California and the SLAC National Accelerator Laboratory. He previously worked at Columbia University, New York and IBM Research, USA.

    Tony Low, University of Minnesota
    Tony Low is Assistant Professor of Electrical and Computer Engineering at the University of Minnesota. He previously worked at Yale University, Connecticut, Columbia University, New York, and the IBM T. J. Watson Research Center, New York.

    Contributors

    Mikhail I. Katsnelson, Annalisa Fasolino, Jian-Hao Chen, Feng Wang, Sufei Shi, C. DiMarco, R. Li, S. Rastogi, J. Hone, J. W. Kysar, Ado Jorio, Luiz Gustavo Cançado, Leandro M. Malard, Alexander A. Balandin, Frank Koppens, Mark B. Lundeberg, Marco Polini, Tony Low, Phaedon Avouris, James R. Williams, Chen Wang, Xidong Duan, Xiangfeng Duan, Aron W. Cummings, Sergio O. Valenzuela, Frank Ortmann, Stephan Roche, Lei Wang, Cory. R. Dean, Dechao Geng, Kian Ping Loh, Rafael Roldán, Francisco Guinea, Hongyi Yu, Wang Yao, Andras Kis, Pasqual Rivera, Xiaodong Xu, Thomas Mueller, Yumeng Shi, Lain-Jong Li, Xiaolong Zou, Boris I. Yakobson, Andrey Chaves, Wei Ji, Jesse Maassen, Traian Dumitrica, Yuchen Du, Zhe Luo, Han Liu, Xianfan Xu, Peide D. Ye, Andres Castellanos-Gomez, Mo Li, Guy Le Lay, Eric Salomon, Thierry Angot, S. Ciraci, S. Cahangirov

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