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Look Inside Compound Semiconductor Surface Passivation and Novel Device Processing

Compound Semiconductor Surface Passivation and Novel Device Processing

Volume 573

$40.99 (C)

Part of MRS Proceedings

  • Date Published: July 1999
  • availability: Temporarily unavailable - available from TBC
  • format: Hardback
  • isbn: 9781558994805

$ 40.99 (C)

Temporarily unavailable - available from TBC
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About the Authors
  • This book covers a wide range of activity in the field of passivation and control of compound semiconductor surfaces and associated novel processing techniques for electronic and photonic devices. The markets for GaAs and InP-based electronics cover wireless communication, mobile phones, defense applications where radiation-hardness is critical, automobile collision avoidance radar and satellites. On the photonics side, displays, communications systems, infrared and UV detectors and lighting applications are prime markets. In all of these devices there is a critical need for control of the surface properties and for reliable long-term encapsulation/passivation of the surface. Compound semiconductors typically have relatively high surface recombination velocities and novel processing methods which minimize surface damage are, therefore, extremely important. Surface passivation and novel device processing form the basis for the book. Topics include: fundamentals of surfaces and their passivation; novel approaches for surface passivation and device processing; oxides - structural, transport and optical properties; compound semiconductor surface passivation and novel device processing and electronic devices and processing.

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    Product details

    • Date Published: July 1999
    • format: Hardback
    • isbn: 9781558994805
    • dimensions: 228 x 152 mm
    • weight: 0.659kg
    • availability: Temporarily unavailable - available from TBC
  • Editors

    H. Hasegawa, Hokkaido University, Japan

    M. Hong, Lucent Technologies, Liberty Corner, New Jersey

    Z. H. Lu, University of Toronto

    S. J. Pearton, University of Florida

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